Enother interesting information: specially for you.
Discussion
- What do you think about this? see, and tell us now.
- resistivity of our undoped GaP crystals is around 10^7 Ohm x cm
- Silicon prism for interfacial chemistry researchhttp://youtu.be/Uz0nu-DXs3kAspheric focusing silicon lenshttp://www.dmphotonics.com/THz_components/Aspheric%20focusing%20silicon%20lens.htmSilicon windows, lenses and prisms for infrared, THz and other applications sales@dmphotonics.com Silicon windows, lenses and prisms for infrared, THz and other applications sales@dmphotonics.com Silicon viewports for Terahertz (THz) radiationhttp://www.dmphotonics.com/Viewport/Silicon%20viewports%20for%20Terahertz%20(THz)%20radiation.htmVacuum viewport Fused silica, Quartz, Sapphire, MgF2, BaF2, ZnSehttp://www.dmphotonics.com/Zinc-selenide-ZnSe-vacuum-viewport/vacuum-viewports-ZnSe.htmDel Mar Photonics offer a range of competitively priced UHV viewports , Conflat, ISO or KF including a variety of coatings to enhance performance.When you send us your inquiry please fill out the following form to indicate all important specifications and e-mail it to us with your inquiry.Del Mar Photonics viewports are manufactured using advanced techniques for control of special and critical processes, including 100 percent helium leak testing and x-ray measurements for metallization control.Windows Materials include:Fused silica, Quartz , Sapphire , MgF2, BaF2, CaF2, ZnSe, ZnS, Ge, Si, PyrexSilicon prism for pulse compression:http://www.dmphotonics.com/ZnSe_prism/Pair%20of%20prisms%20made%20of%20Si%20for%20pulse%20compression.htm? Silicon viewports for Terahertz (THz) radiationhttp://www.dmphotonics.com/Viewport/Silicon%20viewports%20for%20Terahertz%20(THz)%20radiation.htmSample specs:Si_CF63_viewport_60_4 - request a quote sales@dmphotonics.comCONFLAT FLANGE CF63 standard (=4.5 inch outer, 2.5 inch inner diameter)Clear aperture size for the Si window: 60 mmThickness of the Si window: 4 mmOrientation: single crystal, <111>Flatness: 3 waves at 633 nmHousing or flange type/material: SS 304Max Temperature: 150 C degMin Temperature: 15 C degWavelength transmitted: transmission of femtosecond-generated THz radiation into UHV chamber: Frequency 0.5-5 THz (60-600 microns)Window material: Silicon optical gradeCoating: noneHRFZ-Si Hyper-hemispherical lens, o 12 mm, height 7.1 mm http://www.dmphotonics.com/Silicon_optics/Silicon%20hemispherical%20lens.htm?Featured researchhttp://ee.princeton.edu/people/faculty/kaushik-sengupta Silicon-based integrated circuits have gone through a generational change in the last ten years. The ability to integrate billions of transistors with increasing cut-off frequencies and complex signal processing in a single chip has opened up a portion of the electromagnetic spectrum in the mm-Wave and THz frequency ranges previously unavailable to integrated technology. The capability to synthesize, control and manipulate such a large portion of the spectrum (DC-THz) and possibly even optical frequencies in a single versatile platform, has tremendous opportunities in creating cutting-edge technology for a wide range of novel applications from ultra-fast wireless communication to biosensing, imaging, spectroscopy, medical diagnostics and beyond. We believe future innovations in such diverse high-impact technology will not be achieved through innovations in one discipline, but through mutli-thronged approach and a close alliance of various allied scientific disciplines in a synergistic environment. In pursuit of this vision, we innovate on both techniques and architectures that can leverage the strengths of concepts and techniques across disciplines and blend them to create novel and high-performance integrated systems. Broadly my research interests areSilicon-based RF, mm-Wave and THz Circuits and SystemsOnchip Active Electromagnetic Field Synthesis and Control for Sensing and Actuation (RF-THz-Optical)Self-Healing and Reconfigurable Integrated Circuits and Systems in Silicon.Theoretical Understanding of Fundamental Limits of Circuits and Related Systems.
- I am interested in buying a prism made of intrinsic (undoped) silicon. Please also incorporate whether the material is high-resistivity float zone silicon, or lower resistivity silicon. (If you can choose, I prefer the first one). In any case it must be undoped silicon.The dimensions of the prism are sketched below. Please provide me with a price quotation and the lead time for this prism.Additionally, if you have similar silicon prisms in stock (slightly different angles or width/height/thickness, please also provide me with a quotation for these prisms.
- Electrical and Optical Properties of High-Resistivity Gallium PhosphidePhys. Rev. 148, 715 – Published 12 August 1966Bernard Goldstein and S. S. PerlmanStatic and dynamic photoconductive properties of single-crystal high-resistivity (compensated) GaP have been studied in the intrinsic and near infrared spectral region at 300°, 77°, and 27°K. Room-temperature resistivities in excess of 1014 Ω-cm have been produced by copper diffusions into either n- or p-type GaP. Large photoconductivity gains have been measured for intrinsic radiation: Gains in some cases exceeded 104 for fields of 103 V/cm. The photoconductivity is strongly influenced by traps. In p-type material infrared radiation produces stimulation of the dark conductivity. But in n-type material, at 300°K, infrared radiation stimulates only the dark conductivity and quenches the intrinsic photoconductivity at the same photon energies. Thermal-probe measurements indicate that the stimulations are due to increased hole current. At 27°K, only stimulation is observed regardless of the level of intrinsic photoconductivity, but this latter response is due to increased electron current. At the intermediate temperature of 77°K, stimulation (electron and hole) and quenching are present, and the over-all behavior is more complex. Also discussed are room-temperature measurements of space-charge-limited currents which indicate the presence of deep electron traps. An energy-level diagram is presented which can explain these observations. Principal features include electron traps about 0.6 eV below the conduction band, recombination levels near the center of the band gap, and "sensitizing" hole traps about 0.7 eV above the valence band. In addition, measurements of photovoltaic currents and photocapacitance of surface-barrier junctions are presented and shown to represent independent verification of the presence and energy of the "sensitizing" hole-trap levels and the polarity of the charge carriers released by the infrared radiation: Extrinsic photovoltaic response is present and is stimulated by intrinsic radiation in n-type material only; strong infrared quenching is seen of intrinsic photovoltaic currents in p-type material and of intrinsic photocapacitance in n-type material.DOI: http://dx.doi.org/10.1103/PhysRev.148.715AUTHORS & AFFILIATIONSBernard Goldstein and S. S. PerlmanRCA Laboratories, Princeton, New Jerseyhttp://journals.aps.org/archive/abstract/10.1103/PhysRev.148.715
- Eighth International Symposium on Space Terahertz Technology, Harvard University, March 1997Investigations of High-Resistivity, Undoped GaP Crystal for Quasi-Phasematched Difference Frequency Generation to Produce Terahertz FrequencyLocal OscillatorsGregory S. HermanScience Applications International Corporation1 Enterprise Parkway, Suite 300Hampton, Virginia, 23508Stephen P. SandfordNASA Langley Research Center, M/S 468Hampton, Virginia, 23681We are investigating high-resistivity, undoped Gal) crystal as a useful nonlinear optical material for producing terahertz frequency local oscillators using nonlinear optical frequency conversion, a.k.a. laser mixing. Diffusion-bonded stacked (DBS) crystal structures are being developed for quasi-phasematched nonlinear optical frequency conversion from Near-Infrared (NIR) to Far- Infrared (FIR) wavelengths. Sellmeier equations predict coherence lengths for this interaction in GaP to be approximately 960 micrometers. To increase conversion efficiency, a resonantly enhanced difference-frequency generation scheme is being employed.At NASA Langley Research Center, a system is being developed whereby a small percentage of the pump and signal laser energy (1064 nm and 1074 nm, respectively) is diverted and used to actively frequency-lock the pump and signal lasers to adjacent longitudinal modes of an ultrahigh finesse Fabry-Perot reference cavity, thereby greatly enhancing their relative stability. Frequencystability measurements made at NASA Langley with low power lasers using Pound-Drever-Hall locking combined with a new cavity locking technique have demonstrated submillihertz linewidths. The majority of the pump and signal laser energy is than coupled into an external cavity that surrounds the DBS GaP structure to build up the field intensity at the pump and signal wavelengths while the idler wave (118 micrometers) is coupled out.Tuning must be made in increments of the free spectral range of the reference cavity (-3 GHz). Tuning between resonances can be achieved by altering the length of the reference cavity. Depending on the desired system efficiency, frequency-stability, and complexity, the signal laser can either be another Nd:YAG laser operating at 1074 nm (for the 2.5 terahertz OH line), a diode pumped solid-state laser with a different host material, such as GSGG, or a 532-pumped optical parametric oscillator, operating near degeneracy, which could achieve continuous tuning from 100 GHz to 3.0 THz.http://www.nrao.edu/meetings/isstt/papers/1997/1997436000.pdf
- resistivity of our GaP crystals is around 10^7 Ohm x cm
- Can you please provide a quotation for this GaP crystal, 200 um <110>optically contacted to 3mm thick <100> GaP crystal? Also have youverified that the resistivity is sufficiently high that it is actuallytransmissive to THz pulses?You can place your order in our online store.http://greyhawkoptics.com/product_info.php?cPath=32_94&products_id=834&osCsid=e520037cd19fdfb7647befe88de8d710GaP crystal, 110-cut, 10x10x0.2 mm mounted[CR-GaP-10-10-0.2-3]GaP crystal, 110-cut, 10x10x0.2 mm optically contacted on GaP crystal 100-cut, 10x10x3 mmSize 10x10x0.2 mmOrientation 110-cutSupport Size 10x10x3 mmOrientation 100-cutSurface quality 20/40Flatness noParallelism < 3 min
- Customer wrote: We want to generate THz wave in these crystals with femtosecond amplified laser beam @ 800nm.We need to pump the crystal with tilted IR pulse to generate a THz beam in the orthogonal direction of the end side.The following crystals are used:Stoichiometric MgO(0.6%):LiNBO3 Y-cut 5 x 5 x 9.81 mm5 x 5 mm^2 laser grade polished, with the end side cut at63° and AR coating at 800nm on the both sides.Type: prismMaterial: Stoichiometric MgO(0.6%):LiNBO3Dimensions: 5 mm x 5 mm x 9.81 mmCoating: AR coating at 800nm on the both sidesPart number: MgO(0.6%): LiNbO3_5_5_9.83 - request a quote sales@dmphotonics.comhttp://www.dmphotonics.com/LiNbO3-THz-generation/Generation%20of%20THz%20radiation%20using%20bulk,%20periodically%20and%20aperiodically%20poled%20lithium%20niobate.htm
- MgO:LiNbO3 prism for THz generation with Ti:Sapphire laser sales@dmphotonics.com MgO:LiNbO3 prism for THz generation with Ti:Sapphire laser sales@dmphotonics.comCrystals for High Energy THz Pulse Generation by Tilted Pulse Front Excitation sales@dmphotonics.com Crystals for High Energy THz Pulse Generation by Tilted Pulse Front Excitation sales@dmphotonics.com
- Generation of wide terahertz radiation using bulk and quasi-phase-matched GaAs crystal - request a quote for GaAs crystalAuthor(s): Baolong Yu, Naibing Ma, Min-Yi Shih, Alexander V. Parfenov, Physical Optics Corp. (United States)Physical Optics Corporation (POC) studied intense terahertz (THz) generation through optical rectification in bulk low-temperature growth GaAs (LG-GaAs) and quasi-phase-matched orientation pattern GaAs (OP-GaAs). POC performed simulations based on one-dimensional coupled propagation equations of THz and optical fields and conducted experimental tests. The results show that a LG-GaAs crystal with 0.5mm-thick under the excitation of a compact all-fiber femtosecond laser (76 MHz, 100 fs, 100 mW, 800 nm) can generate wide frequency range from 0.1 to 8.2 THz. The enhanced conversion efficiency was found for OP-GaAs crystal that can generate an average THz power of several milliwatts. Both theoretical and experimental results show that average THz output power is proportional to the energy fluence of the excitation source rather than the laser power for ultra-short pulse source. These achievements provide an effective approach to increase THz output power.http://www.dmphotonics.com/GaAs_crystal/GaAs%20crystal.htm
- THz products:THz Spectrometer kit with AntennaTHz transmission setupTHz time domain spectrometer Pacifica fs1060pcaTHz time domain spectrometer Pacifica fs780pcaTHz detectors: Golay cell and LiTaO3 piroelectric detectorsPCA - Photoconductive Antenna as THz photomixerPacifica THz Time Domain Spectrometer - Trestles PacificaHolographic Fourier Transform Spectrometer for THz RegionWedge TiSapphire Multipass Amplifier System - THz pulses generationTerahertz Spectroscopic Radar Mobile System for Detection of Concealed ExplosivesBand pass filters with center wavelengths from 30 THz into GHz rangeLong pass filters with standard rejection edge wavelengths from 60 THz into GHz rangeGeneration of THz radiation using lithium niobateTerahertz crystals (THz): ZnTe, GaP, LiNbO3 - Wedge ZnTe
- Terahertz products from Del Mar PhotonicsTerahertz crystals - ZnTe - GaPhttp://www.delmarphotonics.com/Terahertz/Terahertz-crystals-ZnTe-GaP.htmDel Mar Photonics supply variety of crystals for THz generation, including ZnTe, GaP, GaSe, LiNbO3 and othershttp://femtosecondsystems.com/ZnTe-crystal/ZnTe-crystal.htmDel Mar Photonics supply variety of crystals for THz generation, including ZnTe, GaP, GaSe, LiNbO3 and othershttp://dmphotonics.com/ZnTe-crystal/ZnTe-crystal.htmCustomer wrote: We want to generate THz wave in these crystals with femtosecond amplified laser beam @ 800nm.We need to pump the crystal with tilted IR pulse to generate a THz beam in the orthogonal direction of the end side.The following crystals are used:Stoichiometric MgO(0.6%):LiNBO3 Y-cut 5 x 5 x 9.81 mm5 x 5 mm^2 laser grade polished, with the end side cut at63° and AR coating at 800nm on the both sides.Type: prismMaterial: Stoichiometric MgO(0.6%):LiNBO3Dimensions: 5 mm x 5 mm x 9.81 mmCoating: AR coating at 800nm on the both sidesPart number: MgO(0.6%): LiNbO3_5_5_9.83 - request a quote sales@dmphotonics.comhttp://www.dmphotonics.com/LiNbO3-THz-generation/Generation%20of%20THz%20radiation%20using%20bulk,%20periodically%20and%20aperiodically%20poled%20lithium%20niobate.htmTerahertz crystals from Del Mar Photonics sales@dmphotonics.com Terahertz crystals from Del Mar Photonics sales@dmphotonics.comZnTe crystal, 10x10x0.5 mm, 110-cut[CR-ZnTe-10-10-0.5] http://greyhawkoptics.com/product_info.php?cPath=32_34&products_id=94&osCsid=fed44d01d9246b416e19e4e695504fedSize 10x10 mmThickness 0.5 mmOrientation 110-cutSurface quality 40/20 S/DParallelism < 2 arc minGaP crystal, 110-cut, 10x10x0.1 mm[CR-GaP-10-10-0.1] http://greyhawkoptics.com/product_info.php?cPath=32_94&products_id=400&osCsid=e1c097ce6a44a8b789515a529af146bcSize 10x10x0.1 mmOrientation 110-cutPolish 2 facesCoating no
- GaP crystal, 110-cut, 10x10x0.1 mmhttp://greyhawkoptics.com/product_info.php?products_id=400&osCsid=e520037cd19fdfb7647befe88de8d710GaP crystal, 110-cut, 5x5x0.1 mmhttp://greyhawkoptics.com/product_info.php?cPath=32_94&products_id=393&osCsid=e520037cd19fdfb7647befe88de8d710Extra cost for AR/AR at 1030 nm is $720 (few crystals can be coated at a time)Extra cost for mount is $100.New thin GaP crystals from stock!GaP, (110) cut, 10x10 mm aperture ,both sides polished, unmounted0.1 thick plates - request a quote0.05 thick plates - request a quotehttp://www.dmphotonics.com/GaP_crystal/GaP%20crystal,%20(110)%20cut,%2010x10%20mm%20aperture,%2050%20micron%20thick.htm